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BLM9D2527-09AMZ Power LDMOS transistor

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BLM9D2527-09AMZ Power LDMOS transistor

2-Stage Doherty MMIC Model: BLM9D2527-09AMZ (Standard Model: BLM9D2527-09AM, Z denotes Tape & Reel Packaging)   Manufacturer: Ampleon   Product Type: 9th Generation 28V LDMOS 2-Stage Fully Integrated Doherty MMIC RF Power Amplifier (Optimized for 2.496–2.7 GHz Small Cell and Macro Base Station Driver Stage Applications)   Key Specifications Parameter Specification Frequency Range 2496 MHz to 2700 MHz (2.496–2.7 GHz), covering 5G NR n78/n79 and other key bands Peak Output Power (P3dB) 9 W (Typical, 39.5 dBm), in Doherty Configuration Typical Power Gain 26.5 dB (Typical, 2-stage amplification) Typical Drain Efficiency 45%+ (Doherty Configuration, Optimized DPD Performance) Supply Voltage (VDS) 28 V (Standard), Maximum Rated Voltage 40 V Quiescent Drain Current (IDq) 120 mA (Typical) Package Type 20-pin LGA (7×7×0.98 mm), Surface Mount, with Exposed Pad (Enhanced Thermal Dissipation) Special Features Fully integrated Doherty architecture, built-in carrier/peak…